Technical Presentations at 23rd EU PVSEC

September 1, 2008toSeptember 4, 2008

General Plasma will give two presentations about our exciting Large Area PECVD Technology at the 23rd EU PVSEC in Valencia, Spain.

The first presentation, titled “Silicon Nitride ARC Thin Films by New Plasma Enhanced Chemical Vapor Deposition Source Technology”, highlights the benefits of GPI’s PECVD system for Silicon Nitride deposition.

The second presentation is titled “Recent Development of Low Temperature Plasma Enhanced CVD of Transparent Conductive Oxide in Photovoltaic Applications”, discusses GPI’s current efforts to produce a more economical TCO layer for the manufacture of PV cells.

In addition to these exciting presentations, General Plasma will also have an exhibition stand at the Feria Valencia. Come visit us at booth number 3/B 28 for additional information about our Large Area PECVD advancements and Advanced Source Products!

Written by Gabe Tse on August 20th, 2008

One Response to “Technical Presentations at 23rd EU PVSEC”

  1. Chemical Engineering » Blog Archive » Technical Presentations at 23rd EU PVSEC wrote:

    [...] Technorati Search for: chemical wrote an interesting post today onHere’s a quick excerptSeptember 1, 2008toSeptember 4, 2008 General Plasma will give two presentations about our exciting Large Area PECVD Technology at the 23rd EU PVSEC in Valencia, Spain. The first presentation, titled “Silicon Nitride ARC Thin Films by New Plasma Enhanced Chemical Vapor Deposition Source Technology”, highlights the benefits of GPI’s PECVD system for Silicon Nitride deposition. The second presentation is titled “Recent Development of Low Temperature Plasma Enhanced CVD of Transparent Conductive O [...]