TUCSON, ARIZONA – September 8, 2010 – General Plasma (GPI) is pleased to announce a leading manufacturer of large area glass products has chosen GPI’s revolutionary linear PECVD technology for a one meter pilot line. The new line will be used to develop new thin film products and make existing products more economical.

General Plasma’s Linear PECVD technology offers an alternative to expensive and slow reactive sputtering processes for depositing dielectric thin films. General Plasma’s ACIS™ (AC Ion Source) combined into an RPM™ (Reactive PECVD Module ) provides a thin film PECVD Technology solution that increases the throughput of dielectric thin films by a factor of 3 to 5 over competing sputtering technologies without sacrificing thin film quality. The advanced magnetic plasma design both enables uniformity across substrate widths that exceed 3 meters in length and provides thin film properties suitable for a multitude of large area applications. By utilizing inexpensive chemical precursors the RPM™ solution results in thin film materials and operating costs 4 to 10 times less than those deposited with sputtering technology.

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