GPI / News & Events


July 15-17: GPI at Semicon West / Intersolar NA (San Francisco)

Posted on June 26th, 2008 | Tags: ,
July 15, 2008 10:00 amtoJuly 17, 2008 6:00 pm

Visit us at booth 9051 at the PV at Semicon West / Intersolar North America exhibition to learn more about our newly announced PECVD Silicon Nitride deposition system for wafer based solar cells. The highlights of this system include: 2ms carrier lifetime, excellent coating uniformity and long production runs. Please click here for additional information. In addition to this exciting new product, GPI will also be presenting product information from our Advanced Sources Group - showing a variety of ion sources, high target utilization rotatable and moving magnet planar magnetrons.

General Plasma’s booth is located on the third floor of Moscone West, booth number 9051.

We look forward to seeing you in San Francisco!




GPI acquires Advanced Energy’s Ion Source line

Posted on June 13th, 2008 | Tags: , ,

General Plasma Strengthens its Advanced Sources Division With Acquisition Of The Ion Source Product Line From Advanced Energy Industries; General Plasma Is Now the World Leader In Anode Layer Ion Sources and Technology.

Tucson, Arizona, June 13, 2008 - General Plasma Inc. (GPI) today announced the completion of its acquisition of the Ion Source product line from Advanced Energy Industries, Inc. (Nasdaq: AEIS), based in Fort Collins, Colorado.

“The integration of Advanced Energy’s linear ion sources product line into GPI’s Advanced Sources division secures GPI’s position as the world leader in anode layer ion source technology,” said John Madocks, President and Founder of General Plasma.

“This new product line will allow GPI’s Advanced Sources division to meet a wider set of customer needs and presents significant opportunities for growth into new markets, particularly in the rapidly growing solar energy segment.”

“General Plasma extends its hallmark customer support to Advanced Energy’s ion source customers, offering application support and process development services. GPI’s experience applying our patented ion sources to substrate etching, cleaning, treatment and deposition processes will assist the ion source customer base,” Madocks said.

For additional information on this new product line, click here.

For a copy of the full press release, click here.




GPI President at Intersolar 2008 (Munich) - June 12-14

Posted on June 10th, 2008 |
June 12, 2008toJune 14, 2008

John Madocks (President), and Dr. Patrick Marcus (Electrical Engineering Manager), will be at Intersolar 2008 in Munich from June 12-14. They will be announcing GPI’s breakthrough SiN thin film solution for crystaline and polycrystaline solar cells.




New GPI site launched!

Posted on May 8th, 2008 | Tags: ,

General Plasma, Inc. is proud to announce the launch of its newly redesigned website, dedicated to provide information about General Plasma’s expanding list of vacuum thin film deposition products and systems, including: ion sources for etching and cleaning, magnetrons for sputtering, custom systems or complete turnkey large area PECVD solutions.

The site will be continually updated with new products, technological breakthroughs and industry events. General Plasma is committed to providing cutting edge technology, educating customers and delivering solutions for their thin film coating needs. If you have any questions or comments, please do not hesitate to contact us via the contact form.




Dr. Mark George invited for poster presentation at IEEE PV Specialists Convention

Posted on May 7th, 2008 | Tags: , ,
May 11, 2008 9:00 amtoMay 15, 2008 9:00 am

Dr. Mark George, General Plasma’s Director of Technology has been selected to give a poster presentation at the 33rd IEEE Photovoltaics Specialists Conference in San Diego. The presentation, titled “Silicon Nitride ARC Thin Films, by New Plasma Enhanced Chemical Vapor Deposition Source Technology”, will be displayed in the Randall Ballroom in the Manchester Grand Hyatt Hotel in San Diego.

For more information about the conference, please click here.




Thin Film Development Laboratory Complete!

Posted on May 6th, 2008 | Tags:

General Plasma’s new thin film development laboratory has been completed! New development capabilities include, three development thin film process tools, two class 100 clean rooms, continuous alarm monitoring gas bunkers, gas scrubber. Thin film characterization equipment has also been upgraded to include a phase shift microscope, Hall mobility analyzer, four point probe, UV-VIS-IS spectrometer, taber abrader and optical microscope. For more information, please click here.




Prototype rotatable magnetron magnet packs shipped

Posted on April 29th, 2008 | Tags:

Magnet packs prototypes were shipped to a customers for evaluation today.




GPI Conference Schedule for 2008

Posted on March 27th, 2008 | Tags:

General Plasma will be at the following conferences and trade shows:




April 21-22: GPI at SVC TechCon in Chicago

Posted on March 27th, 2008 | Tags:
April 21, 2008 10:00 amtoApril 22, 2008 5:00 pm

Visit us in booth 1132-1134 to learn about our advanced sources, custom systems, and SiN:H deposition equipment for silicon solar cells. General Plasma is developing a new, “disruptive” PECVD source technology initially targetted at the SiN:H market. Solar cell makers and others that need SiN:H coating systems capable of high deposition rates and long intervals between maintenance will want to hear about this. We look forward to seeing you in Chicago.




SiN:H Coating by New PECVD Source

Posted on March 26th, 2008 | Tags: , , ,
April 23, 2008
11:30 am

John Madocks, CEO and Dr. Mark George, Director of Technology, will present an important paper on silicon nitride deposition for solar cells at the SVC Techcon in Chicago. Their talk, “Hydrogenated SiN for Anti-Reflection and Passivation of Crystalline Silicon Solar Cells by New PECVD Source” is scheduled for Wednesday morning at 11:30 am in room CT-7. This new process, developed by GPI, is far more efficient than conventional processes and sets a new standard for efficiency and mean time between maintenance.