GPI / Products / Ion Sources / New Ion Source Product Line / Multi/Single Cell Ion Source (MCIS/SCIS)

The Round Multi-Cell Ion Source (MSIC) and Single Cell Ion Source (SCIS) have the same advantages as the LIS - no filaments or hollow cathodes, no grid or ion optics, reactive gas compatible, fully neutralized beam - in a compact form factor designed for rotating and stationary substrates.

The MCIS and the SCIS are both gridless, Hall current type ion source, and can be used for contamination removal and surface modifications. The additional feature of the MCIS is its capabilities in thin film deposition. The MCIS can be used to deposit good quality undoped Diamond Like Carbon (DLC) films. The DLC film quality created by the MCIS can be further improved by adding a Si-doped layer to enhance material adhesion.

Additional information about the MCIS and SCIS can be found in the downloadable brochure and table below:


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 MCIS 12 cm SCIS 12 cm

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 Collimated Beam Diffused Beam Collimated Beam

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 Useable Beam Width 28 cm (11.0″) 55 cm (21.7″) 321 cm (126.4″)

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 Maximum Discharge Current (Collimated Mode)* < 0.6 A < 4 A < 0.5 A

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 Discharge Voltage Range (Collimated) 700-1500 V 200-500 V 700-1500 V

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 Maximum Discharge Power* 900 W 2000 W 750 W

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 Ion Beam Current < 90% of discharge current < 25% of discharge current < 90% of discharge current

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 Operating Pressure < 10 mTorr

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 Typical Gas Flow Requirements 20-100 sccm 20-180 sccm

*Maximum current/power may not be achieved under all vacuum conditions, or with all process gases.
For example, current with pure argon is typically less than that achieved with pure oxygen.